L-10 » Electronic Devices- MCQs (12th) | Physics | Objective Questions- 12th

Multiple Choice

ID- 16111

BSEB, 2019 (C)

1. The impurity doped in germanium to obtain n-type germanium is:

(A) Tetravalent
(B) Trivalent
(C) Pentavalent
(D) None of these

Oct 26, 2022 at 09:27 AM

Multiple Choice

ID- 16112

BSEB, 2019 (C)

2. In full wave rectification, if input frequency is 50 Hz, then output frequency will be:

(A) 50 Hz
(B) 100 Hz
(C) 25 Hz
(D) 200 Hz

Oct 26, 2022 at 09:28 AM

Multiple Choice

ID- 16113

BSEB, 2020 (A)

3. Binary of decimal number 25 is:

(A) $(1100)_2$
(B) $(1001)_2$
(C) $(11001)_2$
(D) $(11101)_2$

Oct 26, 2022 at 09:30 AM

Multiple Choice

ID- 16114

BSEB, 2011

4. In n-p-n transistor the relation between emitter current $i_E$, base current $i_B$ and collector current $i_c$, is:

(A) $i_C = i_E\, –\, i_B$
(B) $i_B = i_E\,–\, i_C$
(C) $i_E = i_C\, –\, i_B$
(D) $i_B = i_E + i_C$

Oct 26, 2022 at 10:58 AM

Multiple Choice

ID- 16115

BSEB, 2009

5. Main gate (Basic gate) is:

(A) AND, OR
(B) NAND, NOR
(C) OR, NOT
(D) AND, OR, NOT

Oct 26, 2022 at 10:59 AM

Multiple Choice

ID- 16116

6. Boolean algebra is essentially based on:

(A) number
(B) truth
(C) logic
(D) symbol

Oct 26, 2022 at 11:01 AM

Multiple Choice

ID- 16117

BSEB, 2021 (A)

7. Which of the following is correct for fundamental gate?

(A) AND, OR, NOT
(B) AND, OR
(C) NAND, NOR
(D) OR, NOT

Oct 26, 2022 at 11:55 AM

Multiple Choice

ID- 16118

8. Which statements is correct?

(A) Hole is an antiparticle of electron.
(B) Hole is a vacancy created when an electron leaves a covalent bond.
(C) Hole is the absence of free electrons.
(D) Hole is an artificially created particle.

Oct 26, 2022 at 11:59 AM

Multiple Choice

ID- 16119

9. In an ubiased p-n junction, holes diffuse from the p-region to n-region because:

(A) free electrons in the n-region attract them
(B) they move across the junction by the potential difference
(C) hole concentration in p-region is more as compared to n-region
(D) all of these

Oct 26, 2022 at 12:02 PM

Multiple Choice

ID- 16120

BSEB, 2021 (A)

10. Which of the following is not charged?

(A) Photon
(B) α-particle
(C) β-particle
(D) electron

Oct 26, 2022 at 12:03 PM

Multiple Choice

ID- 16121

11. At absolute zero, Si acts as a:

(A) metal
(B) semiconductor
(C) insulator
(D) none of these

Oct 26, 2022 at 12:04 PM

Multiple Choice

ID- 16122

12. If a small amount of antimony is added to germanium crystal:

(A) its resistance is increased
(B) it becomes a p-type semiconductor
(C) there will be more free electrons then holes in the semiconductor
(D) none of these

Oct 26, 2022 at 12:11 PM

Multiple Choice

ID- 16123

13. The breakdown in a reserve biased p-n junction diode is more likely to occur due to:

(A) large velocity of the minority charge carries if the doping concentration is small
(B) large velocity of the minority charge carries if the doping concentration is small
(C) strong electric field in a depletion region if the doping concentration is small
(D) none of these

Oct 26, 2022 at 12:14 PM

Multiple Choice

ID- 16124

14. What happens during regulation action Zener diode?

(A) The current throws the series resistance ($R_S$) changes.
(B) The resistance offered the Zener changes.
(C) The zener resistance is constant.
(D) Both 'A' and 'B'

Oct 26, 2022 at 12:43 PM

Multiple Choice

ID- 16125

15. In n-type semiconductor when all donor states are filled, then the net charge density in the donor states becomes:

(A) 1
(B) > 1
(C) < 1, but noe zero
(D) zero

Oct 26, 2022 at 12:44 PM

Multiple Choice

ID- 16126

16. The manifestation of band structure in solids is due to:

(A) Heisenberg uncertainty principle
(B) Paul's elclusion principle
(C) Bohr's correspondence principle
(D) Boltzmann law

Oct 26, 2022 at 12:46 PM

Multiple Choice

ID- 16127

17. Which of the following is correct?

(A) $(1100)_2 = (12)_{10}$
(B) $(1001)_2 = (12)_{10}$
(C) $(1111)_2 = (12)_{10}$
(D) $(1102)_2 = (12)_{10}$

Oct 26, 2022 at 01:09 PM

Multiple Choice

ID- 16128

BSEB, 2021 (A)

18. A p-type semiconductor is:

(A) positively charged
(B) negatively charged
(C) uncharged
(D) uncharged at absolute zero temperature but charged at higher temperatures

Oct 26, 2022 at 01:17 PM

Multiple Choice

ID- 16129

BSEB, 2021 (A)

19. Donor impurity atom has valency:

(A) 3
(B) 4
(C) 5
(D) 6

Oct 26, 2022 at 01:18 PM

Multiple Choice

ID- 16130

20. In an n-type silicon, which of the following statements is true:

(A) Electrons are majority carriers and trivalent atoms are the dopants.
(B) Electrons are minority carries and pentavalent atoms are the dopants.
(C) Holes are minority carries and pentavalent atoms are the dopants.
(D) Holes are majority carries and trivalent atoms are the dopants.

Oct 26, 2022 at 01:21 PM

Multiple Choice

ID- 16131

21. Region without free electrons and holes in a p-n junction is:

(A) n-region
(B) p-region
(C) depletion region
(D) none of these

Oct 26, 2022 at 01:22 PM

Multiple Choice

ID- 16132

22. In good conductors of electricity the type of bonding that exist is:

(A) Van der Walls
(B) covalent
(C) ionic
(D) metallic

Oct 26, 2022 at 01:24 PM

Multiple Choice

ID- 16133

23. What is the voltage gain in a common emitter amplifier, where input resistance is 3 Ω and load resistance 24 Ω and β = 61?

(A) 8.4
(B) 488
(C) 240
(D) 0

Oct 26, 2022 at 01:26 PM

Multiple Choice

ID- 16134

BSEB, 2021 (A)

24. The decimal number of binary number $(1001)_2$ is:

(A) $(12)_{10}$
(B) $(18)_{10}$
(C) $(9)_{10}$
(D) $(25)_{10}$

Oct 26, 2022 at 01:27 PM

Multiple Choice

ID- 16135

25. The decimal equivalent of the binary number $(11010.101)_2$ is:

(A) 9.625
(B) 25.265
(C) 26.625
(D) 26.265

Oct 26, 2022 at 01:29 PM

Multiple Choice

ID- 16136

26. Bonds in a semiconductor:

(A) trivalent
(B) covalent
(C) bivalent
(D) monovalent

Oct 26, 2022 at 01:30 PM

Multiple Choice

ID- 16137

27. Number of electrons in the valence shell of a semiconductor is:

(A) 1
(B) 2
(C) 3
(D) 4

Oct 26, 2022 at 01:31 PM

Multiple Choice

ID- 16138

28. Semiconductors of both $p$-type and $n$-type are produced by:

(A) ionic solids
(B) covalent solids
(C) metallic solids
(D) molecular solids

Oct 26, 2022 at 01:32 PM

Multiple Choice

ID- 16139

29. With fall of temperature, the forbidden energy gap of a semiconductor

(A) increases
(B) decreases
(C) remain unchanged
(D) sometimes increases and sometimes decreases

Oct 26, 2022 at 01:34 PM

Multiple Choice

ID- 16140

30. In a p-type semiconductor, current conduction is by:

(A) atoms
(B) holes
(C) electrons
(D) protons

Oct 26, 2022 at 01:35 PM

Multiple Choice

ID- 16141

31. Main function of a transistor is to:

(A) rectify
(B) simplify
(C) amplify
(D) all the above

Oct 26, 2022 at 01:36 PM

Multiple Choice

ID- 16142

32. To obtain p-type silicon semiconductor, we need to dope pure silicon with:

(A) aluminium
(B) phosphorus
(C) oxygen
(D) germanium

Oct 26, 2022 at 01:37 PM

Multiple Choice

ID- 16143

33. For germanium crystal, the forbidden energy gap in joules is:

(A) 1.216 x $10^{–19}$
(B) 1.76 x $10^{–19}$
(C) 1.6 x $10^{–19}$
(D) zero

Oct 26, 2022 at 01:39 PM

Multiple Choice

ID- 16144

34. To obtain electrons as majority charge carries in a semiconductors the impurity mixed is:

(A) monovalent
(B) divalent
(C) trivalent
(D) pentavalent

Oct 26, 2022 at 01:41 PM

Multiple Choice

ID- 16145

35. Energy bands in solids are a consequence of:

(A) Ohm's Law
(B) Pauli's exclusion peinciple
(C) Bohr's theory
(D) Heisenberg's uncertainty principle

Oct 26, 2022 at 01:43 PM

Multiple Choice

ID- 16146

36. In binary system III represents:

(A) 1
(B) 3
(C) 7
(D) 100

Oct 26, 2022 at 01:44 PM

Multiple Choice

ID- 16147

37. On heating, resistance of semiconductors:

(A) decreases
(B) Increases
(C) remains same
(D) first increases then decreases

Oct 26, 2022 at 01:45 PM

Multiple Choice

ID- 16148

38. p-n junction diode can be used as:

(A) amplifier
(B) oscillator
(C) detector
(D) modulator

Oct 26, 2022 at 01:46 PM

Multiple Choice

ID- 16149

39. In intrinsic semiconductor at room temperature, the number of electrons and holes are:

(A) equal
(B) unequal
(C) infinite
(D) zero

Oct 26, 2022 at 06:52 PM

Multiple Choice

ID- 16150

40. Which of the following gate is an universal gate?

(A) OR
(B) NOT
(C) AND
(D) NAND

Oct 26, 2022 at 06:52 PM

Multiple Choice

ID- 16151

41. Zener diode is used for:

(A) producing oscillations in a oscillator
(B) amplification
(C) stabilisation
(D) rectification

Oct 26, 2022 at 06:54 PM

Multiple Choice

ID- 16152

42. In semi conductor, at room temperature:

(A) the valence bond is partially empty and the conduction band is partially filled
(B) the valence band is completely filled and the conduction band is partially filled
(C) the valence band is completely filled
(D) the conduction band is completely filled

Oct 26, 2022 at 06:57 PM

Multiple Choice

ID- 16153

43. Crystal diode is:

(A) amplifying device
(B) fluctuating device
(C) non-linear device
(D) linear device

Oct 26, 2022 at 06:58 PM

Multiple Choice

ID- 16154

44. The part of a transistor which is heavily doped to produce a large number of majority carriers is:

(A) base
(B) emitter
(C) collector
(D) None of these

Oct 26, 2022 at 06:59 PM

Multiple Choice

ID- 16155

45. P-type semiconductor is:

(A) negatively charged
(B) positively charged
(C) uncharged
(D) None of these

Oct 26, 2022 at 07:01 PM

Multiple Choice

ID- 16156

46. The material most commonly used to manufacture electronic solid state devices is:

(A) copper
(B) silicon
(C) germanium
(D) aluminum

Oct 26, 2022 at 07:03 PM

Multiple Choice

ID- 16157

47. What is the number of possible crystal systems?

(A) 5
(B) 7
(C) 14
(D) 16

Oct 26, 2022 at 07:04 PM

Multiple Choice

ID- 16158

48. In a p-type semiconductor, silicon is doped with:

(A) aluminium
(B) arsenic
(C) carbon
(D) phosphorus

Oct 26, 2022 at 07:06 PM

Multiple Choice

ID- 16159

BSEB, 2018 (C)

49. To make a p-type semiconductor Germanium is doped with:

(A) Gallium
(B) Boron
(C) Aluminium
(D) Phosphorus

Oct 27, 2022 at 06:36 AM

Multiple Choice

ID- 16160

BSEB, 2018 (C)

50. For Binary number 10101, the number in decimal representation will be:

(A) 31
(B) 21
(C) 11
(D) 3

Oct 27, 2022 at 06:38 AM

Multiple Choice

ID- 16161

BSEB, 2019 (A)

51. With the increases of temperature the resistivity of semiconductor:

(A) increases
(B) decreases
(C) remains constant
(D) becomes zero

Oct 27, 2022 at 06:41 AM

Multiple Choice

ID- 16162

52. Who designed the transistor?

(A) Flemming
(B) Shockley
(C) Bravis
(D) Edison

Oct 27, 2022 at 06:42 AM

Multiple Choice

ID- 16163

53. In a reserve biased pn-junction, the order of resistance is about:

(A) 10 Ω
(B) 100 Ω
(C) 1000 Ω
(D) $10^6$ Ω

Oct 27, 2022 at 02:05 PM

Multiple Choice

ID- 16164

BSEB, 2016, 2021 (A)

54. The Boolean expression for NOR gate is:

(A) $\overset{————}{A·B}$ = Y
(B) A + B = Y
(C) A . B = Y
(D) $\overset{————}{A + B}$ = Y

Oct 27, 2022 at 02:09 PM

Multiple Choice

ID- 16165

BSEB, 2016, 2020 (A)

55. The majority current-carrier in p-type semiconductor is:

(A) electron
(B) hole
(C) photon
(D) proton

Oct 27, 2022 at 02:11 PM

Multiple Choice

ID- 16166

BSEB, 2016 (C)

56. Boolean expression of OR gate is:

(A) A + B = C
(B) A · B = 0
(C) $\overset{—}{A}$ = A
(D) C = $\overset{——}{AB}$

Oct 27, 2022 at 02:13 PM

Multiple Choice

ID- 16167

BSEB, 2017 (A)

57. Diode is used as:

(A) An amplifier
(B) An oscillator
(C) A modulator
(D) A rectifier

Oct 27, 2022 at 02:15 PM

Multiple Choice

ID- 16168

BSEB, 2017 (A), 2019 (A), 2019 (C)

58. Boolean expression for NAND gate is:

(A) $\overset{———}{A•B}$ = Y
(B) $\overset{———}{A + B}$ = Y
(C) A•B = Y
(D) A + B = Y

Oct 27, 2022 at 02:17 PM

Multiple Choice

ID- 16169

BSEB, 2017 (C)

59. NOT gate in realised by:

(A) n-p-n transistor in common emitter connection
(B) n-p-n transistor in common base connection
(C) p-n-p transistor in common emitter connection
(D) p-n-p transistor in common base connection

Oct 27, 2022 at 02:20 PM

Multiple Choice

ID- 16170

BSEB, 2018 (A)

60. The decimal number 27 can be written in binary number as:

(A) 110011
(B) 10111
(C) 11001
(D) 10011

Oct 27, 2022 at 02:21 PM

Multiple Choice

ID- 16171

BSEB, 2018 (A)

61. A semiconductor is cooled from T, K to T, K, then its resistance will:

(A) increases
(B) decreases
(C) remain constant
(D) first decrease then increase

Oct 27, 2022 at 02:23 PM

Multiple Choice

ID- 16172

BSEB, 2018 (A)

62. If the current constant for a transistor are α & β then:

(A) αβ = 1
(B) β > 1, α < 1
(C) α = β
(D) β < 1, α > 1

Oct 27, 2022 at 02:25 PM

Electronic Devices

Board » Bihar Board » Class 12th » English Medium » Science » Physics » L-10: Electronic Devices

Objective Questions (MCQs)

1. The impurity doped in germanium to obtain n-type germanium is:

2. In full wave rectification, if input frequency is 50 Hz, then output frequency will be:

3. Binary of decimal number 25 is:

4. In n-p-n transistor the relation between emitter current $i_E$, base current $i_B$ and collector current $i_c$, is:

5. Main gate (Basic gate) is:

6. Boolean algebra is essentially based on:

7. Which of the following is correct for fundamental gate?

8. Which statements is correct?

9. In an ubiased p-n junction, holes diffuse from the p-region to n-region because:

10. Which of the following is not charged?

11. At absolute zero, Si acts as a:

12. If a small amount of antimony is added to germanium crystal:

13. The breakdown in a reserve biased p-n junction diode is more likely to occur due to:

14. What happens during regulation action Zener diode?

15. In n-type semiconductor when all donor states are filled, then the net charge density in the donor states becomes:

16. The manifestation of band structure in solids is due to:

17. Which of the following is correct?

18. A p-type semiconductor is:

19. Donor impurity atom has valency:

20. In an n-type silicon, which of the following statements is true:

21. Region without free electrons and holes in a p-n junction is:

22. In good conductors of electricity the type of bonding that exist is:

23. What is the voltage gain in a common emitter amplifier, where input resistance is 3 Ω and load resistance 24 Ω and β = 61?

24. The decimal number of binary number $(1001)_2$ is:

25. The decimal equivalent of the binary number $(11010.101)_2$ is:

26. Bonds in a semiconductor:

27. Number of electrons in the valence shell of a semiconductor is:

28. Semiconductors of both $p$-type and $n$-type are produced by:

29. With fall of temperature, the forbidden energy gap of a semiconductor

30. In a p-type semiconductor, current conduction is by:

31. Main function of a transistor is to:

32. To obtain p-type silicon semiconductor, we need to dope pure silicon with:

33. For germanium crystal, the forbidden energy gap in joules is:

34. To obtain electrons as majority charge carries in a semiconductors the impurity mixed is:

35. Energy bands in solids are a consequence of:

36. In binary system III represents:

37. On heating, resistance of semiconductors:

38. p-n junction diode can be used as:

39. In intrinsic semiconductor at room temperature, the number of electrons and holes are:

40. Which of the following gate is an universal gate?

41. Zener diode is used for:

42. In semi conductor, at room temperature:

43. Crystal diode is:

44. The part of a transistor which is heavily doped to produce a large number of majority carriers is:

45. P-type semiconductor is:

46. The material most commonly used to manufacture electronic solid state devices is:

47. What is the number of possible crystal systems?

48. In a p-type semiconductor, silicon is doped with:

49. To make a p-type semiconductor Germanium is doped with:

50. For Binary number 10101, the number in decimal representation will be:

51. With the increases of temperature the resistivity of semiconductor:

52. Who designed the transistor?

53. In a reserve biased pn-junction, the order of resistance is about:

54. The Boolean expression for NOR gate is:

55. The majority current-carrier in p-type semiconductor is:

56. Boolean expression of OR gate is:

57. Diode is used as:

58. Boolean expression for NAND gate is:

59. NOT gate in realised by:

60. The decimal number 27 can be written in binary number as:

61. A semiconductor is cooled from T, K to T, K, then its resistance will:

62. If the current constant for a transistor are α & β then: